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Topological phases of a dimerized Fermi-Hubbard model for semiconductor nano-lattices

Le, Nguyen, Fisher, Andrew J., Curson, Neil J. and Ginossar, Eran (2019) Topological phases of a dimerized Fermi-Hubbard model for semiconductor nano-lattices npj Quantum Information.

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Motivated by recent advances in fabricating artificial lattices in semiconductors and their promise for quantum simulation of topological materials, we study the one-dimensional dimerized Fermi- Hubbard model. We show how the topological phases at half-filling can be characterized by a reduced Zak phase defined based on the reduced density matrix of each spin subsystem. Signatures of bulk-boundary correspondence are observed in the triplon excitation of the bulk and the edge states of uncoupled spins at the boundaries. At quarter-filling we show that owing to the presence of the Hubbard interaction the system can undergo a transition to the topological ground state of the non-interacting Su-Schrieffer-Heeger model with the application of a moderate-strength external magnetic field. We propose a robust experimental realization with a chain of dopant atoms in silicon or gate-defined quantum dots in GaAs where the transition can be probed by measuring the tunneling current through the many-body state of the chain.

Item Type: Article
Divisions : Library and Learning Support
Authors :
Fisher, Andrew J.
Curson, Neil J.
Date : 31 December 2019
Funders : EPSRC
Grant Title : UK EPSRC Grant
Depositing User : James Marshall
Date Deposited : 03 Feb 2020 15:23
Last Modified : 03 Feb 2020 15:23

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