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Profiling As plasma doped Si/SiO₂ with molecular ions

Trombini, H., Alencar, I., Marmitt, G. G., Fadanelli, R., Grande, P. L., Vos, M. and England, J. G. (2019) Profiling As plasma doped Si/SiO₂ with molecular ions Thin Solid Films.

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Arsenic profiles in plasma doped silicon wafers were traced by scattering of H+ and H+₂ ions at medium energies. Two wafers were doped with the same bias, gas pressure, total implanted dose and AsH₃ concentration. After implantation, the wafers were submitted to industrial cleaning processes and one wafer was subjected to an additional thermal treatment. Scattering spectra of single and molecular ion beams with the same energy per nucleon and charge state differed only by the energy broadening due to the break-up of the molecule, allowing depth profiling by calculation of the dwell time before the backscattering collision. On average, we observed a density reduction of 13% in the SiO₂ overlayer grown after the implantation process. In addition, the arsenic depth-profile determined were in close agreement with independent findings obtained by electron techniques.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
Trombini, H.
Alencar, I.
Marmitt, G. G.
Fadanelli, R.
Grande, P. L.
Vos, M.
England, J.
Date : 2019
Copyright Disclaimer : © 2019. This manuscript version is made available under the CC-BY-NC-ND 4.0 license
Uncontrolled Keywords : Plasma doping; Medium Energy Ion Scattering; Molecular ions; Coulomb explosion; Depth profiling
Related URLs :
Depositing User : Clive Harris
Date Deposited : 19 Sep 2019 14:31
Last Modified : 16 Oct 2019 08:57

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