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Direct E-field Measurement and Imaging of Oscillations within Power Amplifiers

Urbonas, Jonas, Kim, Kevin and Aaen, Peter H (2018) Direct E-field Measurement and Imaging of Oscillations within Power Amplifiers IEEE Transactions on Instrumentation and Measurement.

Text E-field Measurement and Imaging of Oscillations within Power Amplifiers (1).pdf - Accepted version Manuscript

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We present for the first time a measurement system that is capable of directly detecting and identifying the physical location of an oscillation within RF and microwave power amplifiers. The method uses a combined external electrooptic, non-linear vector network analyzer, and vector load-pull measurement system, which allows the measurement of crossfrequency phase-coherent multi-harmonic vector electric fields above the transistor with an 8 μm spatial resolution and 20 MHz – 40 GHz bandwidth. Raster scans above the amplifier allow the time-domain electric fields to be animated and superimposed on top of the amplifier image enabling immediate identification of any oscillations by direct inspection. The method is first demonstrated on a low power amplifier composed of two parallel 0.1-W pHEMT transistors that is intentionally designed to have an odd-mode oscillation. The applicability of the method is further demonstrated by measuring and animating in-package parametric odd-mode oscillations within a 260-W laterally diffused metal-oxide-semiconductor (LDMOS) transistor operating at 2.2 GHz under pulsed RF conditions with 10 μs pulses and 10% duty cycle. The measurement and identification technique is applicable to all semiconductor devices as the external electric field is non-invasively measured above the amplifier.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
Kim, Kevin
Aaen, Peter
Date : 27 September 2018
DOI : 10.1109/TIM.2018.2869407
Copyright Disclaimer : © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works
Uncontrolled Keywords : Bifurcation detection, device characterization, electro-optic sampling, laterally diffused metal-oxidesemiconductor (LDMOS) transistor, near-field measurement, oscillation, stability
Depositing User : Melanie Hughes
Date Deposited : 04 Sep 2018 11:39
Last Modified : 23 Nov 2018 17:01

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