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An Electro-Optic Pulsed NVNA Load-Pull System for Distributed E-field Measurements

Urbonas, Jonas, Kim, Kevin, Vanaverbeke, Frederik and Aaen, Peter (2018) An Electro-Optic Pulsed NVNA Load-Pull System for Distributed E-field Measurements IEEE Transactions on Microwave Theory and Techniques, 66 (6). pp. 2896-2903.

An Electro-Optic Pulsed NVNA Load-Pull System for Distributed E-field Measurements.pdf - Accepted version Manuscript

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In this paper, a new combined electro-optic and pulsed nonlinear vector network analyser-based load-pull measurement system for distributed multi-harmonic electric field measurements is presented. The system uses an external electrooptic probe to measure cross-frequency phase-coherent multiharmonic vector E-fields with an 8 µm spatial resolution and 20 MHz – 20 GHz bandwidth. We demonstrate the performance of the distributed phase-coherent E-field measurements of Ex, Ey and Ez components with 3 harmonics above a commercially available large periphery, packaged, laterally diffused metaloxide-semiconductor (LDMOS) transistor. The transistor was measured at 2.2 GHz under pulsed conditions with 10 µs pulse and 10 % duty cycle, while outputting 55.1 dBm of power. The measured electric fields of the operating transistor are animated for the first time and reveal complex non-uniform operation at harmonic frequencies

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
Kim, Kevin
Vanaverbeke, Frederik
Date : 9 April 2018
Funders : EPSRC
DOI : 10.1109/TMTT.2018.2816930
Copyright Disclaimer : © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works
Uncontrolled Keywords : —Device characterization, electro-optic sampling, laterally diffused metal-oxide-semiconductor (LDMOS) transistor, load-pull, near-field measurement
Depositing User : Melanie Hughes
Date Deposited : 30 Aug 2018 13:10
Last Modified : 11 Dec 2018 11:24

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