Semiconductor line source for low-coherence interferometry
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Zvyagin, A.V., Garcia-Webb, M.G. and Sampson, David (2001) Semiconductor line source for low-coherence interferometry Applied Optics, 40 (6). pp. 913-915.
Full text not available from this repository.Abstract
The suitability for low-coherence interferometry of a high-power, semiconductor laser line source operated at a forward bias current below threshold is demonstrated. Measurements of the important characteristics of the source are presented. For example, the source produces an output power of 1.3mW and a spatially uniform coherence length of 16 mmat a bias current of 86% of threshold (250 mA) at 20°C. The usefulness of the source is verified by measurement of the line profile of a contact lens.
| Item Type: | Article | ||||||||||||
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| Divisions : |
Faculty of Engineering and Physical Sciences Faculty of Health and Medical Sciences |
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| Authors : |
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| Date : | 2001 | ||||||||||||
| DOI : | 10.1364/AO.40.000913 | ||||||||||||
| Uncontrolled Keywords : | Aspect ratio, Light emitting diodes, Semiconductor lasers, Solid state lasers, Semiconductor line sources, Interferometry | ||||||||||||
| Depositing User : | Maria Rodriguez-Marquez | ||||||||||||
| Date Deposited : | 12 Jun 2018 10:20 | ||||||||||||
| Last Modified : | 19 Sep 2018 11:32 | ||||||||||||
| URI: | http://epubs.surrey.ac.uk/id/eprint/846939 |
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