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Semiconductor line source for low-coherence interferometry

Zvyagin, A.V., Garcia-Webb, M.G. and Sampson, David (2001) Semiconductor line source for low-coherence interferometry Applied Optics, 40 (6). pp. 913-915.

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The suitability for low-coherence interferometry of a high-power, semiconductor laser line source operated at a forward bias current below threshold is demonstrated. Measurements of the important characteristics of the source are presented. For example, the source produces an output power of 1.3mW and a spatially uniform coherence length of 16 mmat a bias current of 86% of threshold (250 mA) at 20°C. The usefulness of the source is verified by measurement of the line profile of a contact lens.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences
Faculty of Health and Medical Sciences
Authors :
Zvyagin, A.V.
Garcia-Webb, M.G.
Date : 2001
DOI : 10.1364/AO.40.000913
Uncontrolled Keywords : Aspect ratio, Light emitting diodes, Semiconductor lasers, Solid state lasers, Semiconductor line sources, Interferometry
Depositing User : Maria Rodriguez-Marquez
Date Deposited : 12 Jun 2018 10:20
Last Modified : 19 Sep 2018 11:32

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