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2D-3D crossover in a dense electron liquid in silicon

Matmon, G, Ginossar, Eran, Villis, B, Kolker, A, Lim, T, Solanki, H, Schofield, S, Curson, N, Li, Juerong, Murdin, Benedict , Fisher, A and Aeppli, G (2018) 2D-3D crossover in a dense electron liquid in silicon Physical Review B, 97, 155306.

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Doping of silicon via phosphine exposures alternating with molecular beam epitaxy overgrowth is a path to Si:P substrates for conventional microelectronics and quantum information technologies. The technique also provides a new and well-controlled material for systematic studies of two-dimensional lattices with a half-filled band. We show here that for a dense (ns = 2.8 × 1014 cm−2 ) disordered two-dimensional array of P atoms, the full field angle-dependent magnetostransport is remarkably well described by classic weak localization theory with no corrections due to interaction effects. The two- to three-dimensional cross-over seen upon warming can also be interpreted using scaling concepts, developed for anistropic three-dimensional materials, which work remarkably except when the applied fields are nearly parallel to the conducting planes.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
Matmon, G
Villis, B
Kolker, A
Lim, T
Solanki, H
Schofield, S
Curson, N
Fisher, A
Aeppli, G
Date : 23 April 2018
DOI : 10.1103/PhysRevB.97.155306
Copyright Disclaimer : Copyright 2018 American Physical Society
Depositing User : Melanie Hughes
Date Deposited : 11 Apr 2018 09:57
Last Modified : 16 Jan 2019 19:09

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