Short lifetime components in the relaxation of boron acceptors in silicon

Saeedi, K., Stavrias, N., Redlich, B., Riemann, H., Abrosimov, N.V., Becker, P., Pohl, H-J., Thewalt, M.L.W. and Murdin, Benedict (2018) Short lifetime components in the relaxation of boron acceptors in silicon Physical Review B, 97 (12), 125205. 125205-1 - 125205-6.

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Abstract

We present time-resolved measurements of the relaxation between the orbital states of the shallow acceptor boron in silicon. The silicon host was enriched Si-28, which exhibits life-time broadened absorption lines. We observed a wide range of T1 lifetimes from 6ps to 130ps depending on the excited state and the pump intensity. The fastest transients have not been observed previously in the time domain, and they are caused by the phonon relaxation responsible for the small-signal frequency domain line-width. We identify the slower components with an ionisation/recombination/cascade pathway.

Item Type:	Article
Divisions :	Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :	Name Email ORCID Saeedi, K. Stavrias, N. Redlich, B. Riemann, H. Abrosimov, N.V. Becker, P. Pohl, H-J. Thewalt, M.L.W. Murdin, Benedict B.Murdin@surrey.ac.uk
Date :	26 March 2018
Funders :	Engineering and Physical Sciences Research Council (EPSRC)
DOI :	10.1103/PhysRevB.97.125205
Copyright Disclaimer :	Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.
Depositing User :	Clive Harris
Date Deposited :	01 Mar 2018 15:45
Last Modified :	11 Dec 2018 11:23
URI:	http://epubs.surrey.ac.uk/id/eprint/845931

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