Progress towards III-V-Bismide Alloys for Near- and Mid-Infrared Laser Diodes

Marko, Igor and Sweeney, Stephen (2017) Progress towards III-V-Bismide Alloys for Near- and Mid-Infrared Laser Diodes IEEE Journal of Selected Topics in Quantum Electronics, 23 (6), 1501512.

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Abstract

Bismuth-containing III-V alloys open-up a range of possibilities for practical applications in semiconductor lasers, photovoltaics, spintronics, photodiodes and thermoelectrics. Of particular promise for the development of semiconductor lasers is the possibility to grow GaAsBi laser structures such that the spin-orbit-splitting energy (ΔSO) is greater than the bandgap (Eg) in the active region for devices operating around the telecom wavelength of 1.55 μm, thereby suppressing the dominant efficiency-limiting loss processes in such lasers, namely Auger recombination and inter-valence band absorption (IVBA). The ΔSO > Eg band structure is present in GaAsBi alloys containing > 10% Bi, at which composition the alloy band gap is close to 1.55 μm on a GaAs substrate making them an attractive candidate material system for the development of highly efficient, uncooled GaAs-based lasers for telecommunications. Here we discuss progress towards this goal and present a comprehensive set of data on the properties of GaAsBi lasers including optical gain and absorption characteristics and the dominant carrier recombination processes in such systems. Finally, we briefly review the potential of GaAsBiN and InGaAsBi material systems for near- and mid-infrared photonic devices on GaAs and InP platforms, respectively.

Item Type:	Article
Divisions :	Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :	Name Email ORCID Marko, Igor I.Marko@surrey.ac.uk Sweeney, Stephen S.Sweeney@surrey.ac.uk
Date :	2017
DOI :	10.1109/JSTQE.2017.2719403
Copyright Disclaimer :	© 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Uncontrolled Keywords :	Terms—Bismides; Bismide alloys; GaAsBi; InGaAsBi; GaAsNBi; Laser diode; Optical gain; Internal optical losses; Absorption spectra; Spontaneous emission; Quantum well temperature sensitivity; Auger recombination; Carrier recombination processes; Efficiency
Depositing User :	Clive Harris
Date Deposited :	29 Jun 2017 09:56
Last Modified :	16 Jan 2019 18:53
URI:	http://epubs.surrey.ac.uk/id/eprint/841503

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