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Dataset for Progress towards III-V-Bismide Alloys for Near- and Mid-Infrared Laser Diodes

Marko, Igor (2017) Dataset for Progress towards III-V-Bismide Alloys for Near- and Mid-Infrared Laser Diodes [Dataset]

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Item Type: Dataset
Subjects : Physics
Divisions : Faculty of Engineering and Physical Sciences
Principal Investigator :
Principal InvestigatorEmail
Description : Bismuth-containing III-V alloys open-up a range of possibilities for practical applications in semiconductor lasers, photovoltaics, spintronics, photodiodes and thermoelectrics. Of particular promise for the development of semiconductor lasers is the possibility to grow GaAsBi laser structures such that the spin-orbit-splitting energy (ΔSO) is greater than the bandgap (Eg) in the active region for devices operating around the telecom wavelength of 1.55 µm, thereby suppressing the dominant efficiency-limiting loss processes in such lasers, namely Auger recombination and inter-valence band absorption (IVBA). The ΔSO > Eg band structure is present in GaAsBi alloys containing > 10% Bi, at which composition the alloy band gap is close to 1.55 µm on a GaAs substrate making them an attractive candidate material system for the development of highly efficient, uncooled GaAs-based lasers for telecommunications. Here we discuss progress towards this goal and present a comprehensive set of data on the properties of GaAsBi lasers including optical gain and absorption characteristics and the dominant carrier recombination processes in such systems. Finally, we briefly review the potential of GaAsBiN and InGaAsBi material systems for near- and mid-infrared photonic devices on GaAs and InP platforms, respectively. Made possible by the following grants: Efficient Photonic Devices for Near- and Mid-Infrared Applications; Exploring Short Wavelength Limits for High Performance Quantum Cascade Lasers; Realising a solid state photomultiplier and infrared detectors through Bismide containing semiconductors; BIsmide And Nitride Components for High temperature Operation
Publication Year of Data : 2017
Publication Date of Paper : 2017
Creation Dates : 2013-2017
Funder : EPSRC, EU-FP7
DOI : 10.15126/surreydata.00841469
Grant Title : All grant titles listed in description.
Access Statement : Due to confidentiality agreements with research collaborators, supporting data can only be made available to bona fide researchers subject to a non-disclosure agreement. Email for for access requests.
Data Access Contact :
Data Access ContactEmail
External Data Location : Internal location
Data Format : doc-files, txt-data files, origing graphs, images
Contributors :
Discipline : physics
Keywords : Bismides, bismide alloys, GaAsBi, InGaAsBi, GaAsNBi, laser diode, optical gain, internal optical losses, absorption spectra, spontaneous emission, quantum well temperature sensitivity, Auger recombination, carrier recombination processes, efficiency
Data Collection Method : experimental measurements and theoretical calculations
Additional Information : Paper publisher: IEEE, Journal of Selected Topics in Quantum Electronics
Depositing User : Alice Motes
Date Deposited : 22 Jun 2017 16:15
Last Modified : 11 Dec 2018 11:23

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