Techniques for temperature-controlled ion implantation

England, et al. (2013) Techniques for temperature-controlled ion implantation 8,450,193.

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Abstract

Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise a platen to hold a wafer in a single-wafer process chamber during ion implantation, the platen including: a wafer clamping mechanism to secure the wafer onto the platen and to provide a predetermined thermal contact between the wafer and the platen, and one or more heating elements to pre-heat and maintain the platen in a predetermined temperature range above room temperature. The apparatus may also comprise a post-cooling station to cool down the wafer after ion implantation. The apparatus may further comprise a wafer handling assembly to load the wafer onto the pre-heated platen and to remove the wafer from the platen to the post-cooling station.

Item Type:	Patent
Divisions :	Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :	Name Email ORCID England, Jonathan j.england@surrey.ac.uk Muka, Richard Stephen Arevalo, Edwin A. Fang, Ziwei Singh, Vikram
Date :	28 May 2013
DOI :	8,450,193
Depositing User :	Clive Harris
Date Deposited :	26 May 2017 12:34
Last Modified :	06 Jul 2019 05:23
URI:	http://epubs.surrey.ac.uk/id/eprint/841203

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