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Techniques for temperature-controlled ion implantation

England, et al. (2013) Techniques for temperature-controlled ion implantation 8,450,193.

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Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise a platen to hold a wafer in a single-wafer process chamber during ion implantation, the platen including: a wafer clamping mechanism to secure the wafer onto the platen and to provide a predetermined thermal contact between the wafer and the platen, and one or more heating elements to pre-heat and maintain the platen in a predetermined temperature range above room temperature. The apparatus may also comprise a post-cooling station to cool down the wafer after ion implantation. The apparatus may further comprise a wafer handling assembly to load the wafer onto the pre-heated platen and to remove the wafer from the platen to the post-cooling station.

Item Type: Patent
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
Muka, Richard Stephen
Arevalo, Edwin A.
Fang, Ziwei
Singh, Vikram
Date : 28 May 2013
DOI : 8,450,193
Depositing User : Clive Harris
Date Deposited : 26 May 2017 12:34
Last Modified : 06 Jul 2019 05:23

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