University of Surrey

Test tubes in the lab Research in the ATI Dance Research

Techniques for temperature controlled ion implantation

Blake, et al. (2011) Techniques for temperature controlled ion implantation 7,993,698.

Full text not available from this repository.


Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise at least one thermal sensor adapted to measure a temperature of a wafer during an ion implantation process inside an end station of an ion implanter. The apparatus may also comprise a thermal conditioning unit coupled to the end station. The apparatus may further comprise a controller in communication with the thermal sensor and the thermal conditioning unit, wherein the controller compares the measured temperature to a desired wafer temperature and causes the thermal conditioning unit to adjust the temperature of the wafer based upon the comparison.

Item Type: Patent
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
Blake, Julian
Holden, Scott
Walther, Steven R.
Liebert, Reuel
Muka, Richard S.
Jeong, Ukyo
Liu, Jinning
Shim, Kyu-Ha
Mehta, Sandeep
Date : 9 August 2011
DOI : 7,993,698
Depositing User : Clive Harris
Date Deposited : 26 May 2017 12:12
Last Modified : 06 Jul 2019 05:23

Actions (login required)

View Item View Item


Downloads per month over past year

Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800