Techniques for temperature controlled ion implantation

Blake, et al. (2011) Techniques for temperature controlled ion implantation 7,993,698.

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Abstract

Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise at least one thermal sensor adapted to measure a temperature of a wafer during an ion implantation process inside an end station of an ion implanter. The apparatus may also comprise a thermal conditioning unit coupled to the end station. The apparatus may further comprise a controller in communication with the thermal sensor and the thermal conditioning unit, wherein the controller compares the measured temperature to a desired wafer temperature and causes the thermal conditioning unit to adjust the temperature of the wafer based upon the comparison.

Item Type:	Patent
Divisions :	Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :	Name Email ORCID Blake, Julian England, Jonathan j.england@surrey.ac.uk Holden, Scott Walther, Steven R. Liebert, Reuel Muka, Richard S. Jeong, Ukyo Liu, Jinning Shim, Kyu-Ha Mehta, Sandeep
Date :	9 August 2011
DOI :	7,993,698
Depositing User :	Clive Harris
Date Deposited :	26 May 2017 12:12
Last Modified :	06 Jul 2019 05:23
URI:	http://epubs.surrey.ac.uk/id/eprint/841199

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