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Techniques for low-temperature ion implantation

England, et al. (2009) Techniques for low-temperature ion implantation 7,528,392.

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Techniques for low-temperature ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a wafer support mechanism to hold a wafer during ion implantation and to facilitate movement of the wafer in at least one dimension. The apparatus may also comprise a cooling mechanism coupled to the wafer support mechanism. The cooling mechanism may comprise a refrigeration unit, a closed loop of rigid pipes to circulate at least one coolant from the refrigeration unit to the wafer support mechanism, and one or more rotary bearings to couple the rigid pipes to accommodate the movement of the wafer in the at least one dimension.

Item Type: Patent
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
Muka, Richard Stephen
Lischer, D. Jeffrey
Date : 5 May 2009
DOI : 7,528,392
Depositing User : Clive Harris
Date Deposited : 26 May 2017 11:27
Last Modified : 16 Jan 2019 18:52

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