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Technique for uniformity tuning in an ion implanter system

Olson, et al. (2008) Technique for uniformity tuning in an ion implanter system 7,355,188.

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A technique for uniformity tuning in an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam uniformity tuning. The method may comprise generating an ion beam in an ion implanter system. The method may also comprise tuning one or more beam-line elements in the ion implanter system to reduce changes in a beam spot of the ion beam when the ion beam is scanned along a beam path. The method may further comprise adjusting a velocity profile for scanning the ion beam along the beam path such that the ion beam produces a substantially uniform ion beam profile along the beam path.

Item Type: Patent
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
Olson, Joseph C.
Evans, Morgan D.
Fielder, Douglas Thomas
Norris, Gregg Alexander
Chang, Shengwu
Brennan, Damian
Callahan, William Gray
Date : 8 April 2008
DOI : 7,355,188
Depositing User : Clive Harris
Date Deposited : 26 May 2017 10:18
Last Modified : 16 Jan 2019 18:52

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