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Application of ion-implantation for improved non-volatile resistive random access memory (ReRAM)

Elliman, R, Saleh, M, Kim, T-H, Venkatachalam, D, Belay, K, Ruffell, S, Kurunczi, P and England, JG (2013) Application of ion-implantation for improved non-volatile resistive random access memory (ReRAM) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 307. pp. 98-101.

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Resistive switching in transition metal oxides is believed to be controlled by the migration of oxygen vacancies and many interesting device structures employ substoichiometric oxide layers as a source of these active defects. However, the growth of thin (∼10 nm) oxide/suboxide heterostructures (e.g. HfO2/HfOx or Ta2O5/TaOx) is difficult using conventional film deposition techniques. In this study, ion-implantation is shown to provide an alternative means of synthesizing such structures, with results reported for Ta2O5/TaOx heterostructures fabricated by oxygen-implantation of Ta. The electrical properties of the fabricated heterostructures are discussed with reference to the physical structure of the samples determined from transmission electron microscopy and X-ray photoelectron spectroscopy.

Item Type: Article
Subjects : Electronic Engineering
Divisions : Surrey research (other units)
Authors :
Elliman, R
Saleh, M
Kim, T-H
Venkatachalam, D
Belay, K
Ruffell, S
Kurunczi, P
Date : 15 July 2013
DOI : 10.1016/j.nimb.2012.11.094
Copyright Disclaimer : 2013 Elsevier B.V. All rights reserved.
Uncontrolled Keywords : Ion-implantation, Resistive switching, Non-volatile memory, Tantalum oxide
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 13:58
Last Modified : 25 Jan 2020 00:36

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