Industrial Challenges in Ion Beam Processing and Metrology in the 3D Era
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England, JG and Moller, W (2015) Industrial Challenges in Ion Beam Processing and Metrology in the 3D Era Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 365 (Part A). pp. 105-109.
Full text not available from this repository.Abstract
Ion beam mechanisms present in plasma doping have been investigated by comparing SIMS measurements of Ge implants into deposited layers of As on Si wafers to planar dynamic ion beam models of the implants and SIMS analyses. Industrial devices are overcoming the limitations of lateral scaling by using the vertical direction. The same modelling approach would be valuable for interpreting 1.5D SIMS analyses of plasma doping of 3D-NAND test structures but 3D dynamic codes do not yet have all the capabilities to allow this. The required features are being developed within a static 3D code, TRI3DSTP, which has been used to qualitatively explain the good uniformity of a P plasma doping process and indicate where more quantitative explanations will be possible once the full dynamic capabilities are available.
| Item Type: | Article | |||||||||
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| Subjects : | Electronic Engineering | |||||||||
| Divisions : | Surrey research (other units) | |||||||||
| Authors : |
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| Date : | 15 December 2015 | |||||||||
| DOI : | 10.1016/j.nimb.2015.03.016 | |||||||||
| Copyright Disclaimer : | 2015 Elsevier B.V. All rights reserved | |||||||||
| Uncontrolled Keywords : | Ion-implantation, Ion beam modelling, Plasma doping, 3D NAND | |||||||||
| Depositing User : | Symplectic Elements | |||||||||
| Date Deposited : | 17 May 2017 13:58 | |||||||||
| Last Modified : | 25 Jan 2020 00:36 | |||||||||
| URI: | http://epubs.surrey.ac.uk/id/eprint/841043 |
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