Growth and characterisation of Ga(NAsSi) alloy by metal-organic vapour phase epitaxy
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Bushell, ZL, Ludewig, P, Knaub, N, Batool, Z, Hild, K, Stolz, W, Sweeney, SJ and Volz, K (2014) Growth and characterisation of Ga(NAsSi) alloy by metal-organic vapour phase epitaxy JOURNAL OF CRYSTAL GROWTH, 396. pp. 79-84.
Full text not available from this repository.| Item Type: | Article | |||||||||||||||||||||||||||
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| Divisions : | Surrey research (other units) | |||||||||||||||||||||||||||
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| Date : | 15 June 2014 | |||||||||||||||||||||||||||
| DOI : | 10.1016/j.jcrysgro.2014.03.038 | |||||||||||||||||||||||||||
| Uncontrolled Keywords : | Science & Technology, Physical Sciences, Technology, Crystallography, Materials Science, Multidisciplinary, Physics, Applied, Materials Science, Physics, CRYSTALLOGRAPHY, MATERIALS SCIENCE, MULTIDISCIPLINARY, PHYSICS, APPLIED, Metal-organic vapour phase epitaxy, Bismuth compounds, GaNAsBi, Nitrides, Semiconducting III-V materials, Semiconducting quaternary alloys, MOLECULAR-BEAM EPITAXY, IMPROVED LUMINESCENCE EFFICIENCY, MODULATION SPECTROSCOPY, (GAIN)(NAS), SEMICONDUCTORS, GANASBI, ORIGIN | |||||||||||||||||||||||||||
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| Depositing User : | Symplectic Elements | |||||||||||||||||||||||||||
| Date Deposited : | 17 May 2017 13:19 | |||||||||||||||||||||||||||
| Last Modified : | 24 Jan 2020 23:48 | |||||||||||||||||||||||||||
| URI: | http://epubs.surrey.ac.uk/id/eprint/838758 |
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