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Localization effects and band gap of GaAsBi alloys

Mohmad, AR, Bastiman, F, Hunter, CJ, Richards, RD, Sweeney, SJ, Ng, JS, David, JPR and Majlis, BY (2014) Localization effects and band gap of GaAsBi alloys PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 251 (6). pp. 1276-1281.

Full text not available from this repository.
Item Type: Article
Divisions : Surrey research (other units)
Authors :
Mohmad, AR
Bastiman, F
Hunter, CJ
Richards, RD
Ng, JS
David, JPR
Majlis, BY
Date : 1 June 2014
DOI : 10.1002/pssb.201350311
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Condensed Matter, Physics, band gap, GaAsBi, localization theory, photoluminescence, MOLECULAR-BEAM EPITAXY, SEMICONDUCTORS, GAAS1-XBIX, EMISSION, ORIGIN
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 13:17
Last Modified : 24 Jan 2020 23:44

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