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A SiGe HEMT mixer IC with low conversion loss

Kallfass, I, Gruson, F, Abele, P, Michelakis, K, Hackbarth, T, Hieber, KH, Muller, J and Schumacher, H (2003) A SiGe HEMT mixer IC with low conversion loss Conference Proceedings - 33rd European Microwave Conference, EuMC 2003, 1. pp. 407-410.

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The authors present the first SiGe HEMT mixer integrated circuit. The active mixer stage, operating up to 10GHz RF, has been designed and realized using a 0.1 μm gate length transistor technology. The design is based on a new large-signal simulation model developed for the SiGe HEMT. Good agreement between simulation and measurement is reached. The mixer exhibits 4.0dB and 4.7dB conversion loss when down-converting 3.0GHz and 6.0GHz signals, respectively, to an intermediate frequency of 500MHz using high-side injection of 5dBm local oscillator power. Conversion loss is less than 8dB for RF frequencies up to 10GHz with a mixer linearity of-8.8dBm input related ldB compression point. © 2003 EUMA.

Item Type: Article
Divisions : Surrey research (other units)
Authors :
Kallfass, I
Gruson, F
Abele, P
Hackbarth, T
Hieber, KH
Muller, J
Schumacher, H
Date : 1 January 2003
DOI : 10.1109/EUMC.2003.1262307
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 13:14
Last Modified : 24 Jan 2020 23:39

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