Band Structure Properties of (BGa)P Semiconductors for Lattice Matched Integration on (001) Silicon

Hossain, N, Hosea, J, Liebich, S, Zimprich, M, Volz, K, Kunert, B, Stolz, W and Sweeney, S (2013) Band Structure Properties of (BGa)P Semiconductors for Lattice Matched Integration on (001) Silicon In: 31st International Conference on the Physics of Semiconductors (ICPS), 2012-07-29 - 2012-08-03, Zurich, SWITZERLAND.

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Item Type:	Conference or Workshop Item (UNSPECIFIED)
Divisions :	Surrey research (other units)
Authors :	Name Email ORCID Hossain, N Hosea, J Liebich, S Zimprich, M Volz, K Kunert, B Stolz, W Sweeney, S s.sweeney@surrey.ac.uk
Date :	1 January 2013
DOI :	10.1063/1.4848278
Contributors :	Contribution Name Email ORCID Ihn, T Rossler, C Kozikov, A publisher AMER INST PHYSICS,
Uncontrolled Keywords :	Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Physics, Applied, Engineering, Physics, BGaP, GaNAsP, Silicon laser, Carrier recombination, Silicon photonics
Related URLs :	Author
Depositing User :	Symplectic Elements
Date Deposited :	17 May 2017 13:14
Last Modified :	23 Jan 2020 18:25
URI:	http://epubs.surrey.ac.uk/id/eprint/838460

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