Direct observation of indium precipitates in silicon following high dose ion implantation
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Dudeck, KJ, Huante-Ceron, E, Knights, AP, Gwilliam, RM and Botton, GA (2013) Direct observation of indium precipitates in silicon following high dose ion implantation SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28 (12), ARTN 12501.
Full text not available from this repository.| Item Type: | Article | ||||||||||||||||||
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| Divisions : | Surrey research (other units) | ||||||||||||||||||
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| Date : | 1 December 2013 | ||||||||||||||||||
| DOI : | 10.1088/0268-1242/28/12/125012 | ||||||||||||||||||
| Uncontrolled Keywords : | Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Materials Science, Multidisciplinary, Physics, Condensed Matter, Engineering, Materials Science, Physics, ENGINEERING, ELECTRICAL & ELECTRONIC, MATERIALS SCIENCE, MULTIDISCIPLINARY, PHYSICS, CONDENSED MATTER, SOLID-PHASE EPITAXY, DIFFUSION, REDISTRIBUTION, REGROWTH, DAMAGE, MODEL, SI | ||||||||||||||||||
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| Depositing User : | Symplectic Elements | ||||||||||||||||||
| Date Deposited : | 17 May 2017 13:08 | ||||||||||||||||||
| Last Modified : | 24 Jan 2020 23:28 | ||||||||||||||||||
| URI: | http://epubs.surrey.ac.uk/id/eprint/838057 |
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