Intersubband Absorption in Strain-compensated InAlAs/AlAs/In(x)Ga(1-x)As (x~0.8) Quantum Wells Grown on InP
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Lai, KT (2003) Intersubband Absorption in Strain-compensated InAlAs/AlAs/In(x)Ga(1-x)As (x~0.8) Quantum Wells Grown on InP In: The Seventh Mid-infrared Network Meeting, 2003-03-19 - 2003-03-19, Hull University, UK.
Full text not available from this repository.Item Type: | Conference or Workshop Item (UNSPECIFIED) | ||||||
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Divisions : | Surrey research (other units) | ||||||
Authors : |
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Date : | 19 March 2003 | ||||||
Uncontrolled Keywords : | Intersubband, Strain-compensated, III-V Semiconductors, Multiple Quantum Wells | ||||||
Depositing User : | Symplectic Elements | ||||||
Date Deposited : | 17 May 2017 13:04 | ||||||
Last Modified : | 23 Jan 2020 18:16 | ||||||
URI: | http://epubs.surrey.ac.uk/id/eprint/837795 |
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