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Reconfigurations and diffusion of trivacancy in silicon

Markevich, VP, Peaker, AR, Hamilton, B, Lastovskii, SB, Murin, LI, Coutinho, J, Markevich, AV, Rayson, MJ, Briddon, PR and Svensson, BG (2012) Reconfigurations and diffusion of trivacancy in silicon Physica B: Condensed Matter, 407 (15). pp. 2974-2977.

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Disappearance of the divacancy (V 2) and trivacancy (V 3) complexes upon isochronal and isothermal annealing of electron irradiated Si:O crystals has been studied by means of deep level transient spectroscopy. The annealing studies have shown that the V 2 and V 3 defects are mobile in Si at T>200 °C and in oxygen-rich material are trapped by interstitial oxygen atoms so resulting in the appearance of V 2O and V 3O defects. The activation energies for diffusion of the V 2 and V 3 centers have been determined. Density functional modeling calculations have been carried out to investigate the migration and reorientation mechanisms of V 3 in large silicon supercells. It is proposed that these comprise a sequence of transformations between V 3(D 3) and V 3(C 2v) configurations. © 2011 Elsevier B.V. All rights reserved.

Item Type: Article
Divisions : Surrey research (other units)
Authors :
Markevich, VP
Peaker, AR
Hamilton, B
Lastovskii, SB
Murin, LI
Coutinho, J
Markevich, AV
Briddon, PR
Svensson, BG
Date : 1 August 2012
DOI : 10.1016/j.physb.2011.08.001
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 13:03
Last Modified : 24 Jan 2020 23:21

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