University of Surrey

Test tubes in the lab Research in the ATI Dance Research

Oxygen vacancy migration in compressively strained SrTiO3

Al-Hamadany, R, Goss, JP, Briddon, PR, Mojarad, SA, Al-Hadidi, M, O'Neill, AG and Rayson, MJ (2013) Oxygen vacancy migration in compressively strained SrTiO3 Journal of Applied Physics, 113 (2).

Full text not available from this repository.


The intrinsic properties of strontium titanate render it promising in applications such as gate dielectrics and capacitors. However, there is growing evidence that oxygen vacancies significantly impact upon its use, with the diffusion and deep donor level of the oxygen vacancy leading to electrical leakage. Where grown epitaxially on a lattice mismatched substrate, SrTiO 3 undergoes bi-axial strain, altering its crystal structure and electronic properties. In this paper, we present the results of first-principles simulations to evaluate the impact of strain in a (001) plane upon the migration of oxygen vacancies. We show that in the range of strains consistent with common substrate materials, diffusion energies in different directions are significantly affected, and for high values of strain may be altered by as much as a factor of two. The resulting diffusion anisotropy is expected to impact upon the rate at which oxygen vacancies are injected into the films under bias, a critical factor in the leakage and resistive switching seen in this material. © 2013 American Institute of Physics.

Item Type: Article
Divisions : Surrey research (other units)
Authors :
Al-Hamadany, R
Goss, JP
Briddon, PR
Mojarad, SA
Al-Hadidi, M
O'Neill, AG
Date : 14 January 2013
DOI : 10.1063/1.4775397
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 13:03
Last Modified : 24 Jan 2020 23:21

Actions (login required)

View Item View Item


Downloads per month over past year

Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800