Intersubband absorption in strain-compensated InAlAs/AlAs/InxGa(1−x)As (x∼0.8) quantum wells grown on InP
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Lai, KT (2003) Intersubband absorption in strain-compensated InAlAs/AlAs/InxGa(1−x)As (x∼0.8) quantum wells grown on InP JOURNAL OF APPLIED PHYSICS, 93 (10). pp. 6065-6067.
Full text not available from this repository.| Item Type: | Article | ||||||
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| Divisions : | Surrey research (other units) | ||||||
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| Date : | 15 May 2003 | ||||||
| DOI : | 10.1063/1.1565688 | ||||||
| Uncontrolled Keywords : | Intersubband, strain-compensated, III-V and II-VI semiconductors, Quantum wells | ||||||
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| Depositing User : | Symplectic Elements | ||||||
| Date Deposited : | 17 May 2017 12:58 | ||||||
| Last Modified : | 24 Jan 2020 23:10 | ||||||
| URI: | http://epubs.surrey.ac.uk/id/eprint/837415 |
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