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Characterization of thick epitaxial GaAs layers for X-ray detection

Samic, H, Sun, GC, Donchev, V, Nghia, NX, Gandouzi, M, Zazoui, M, Bourgoin, JC, El-Abbassi, H, Rath, S and Sellin, PJ (2002) Characterization of thick epitaxial GaAs layers for X-ray detection In: 3rd International Workshop on Radiation Imaging Detectors, 2001-09-23 - 2001-09-27, OROSEI, ITALY.

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Divisions : Surrey research (other units)
Authors :
Samic, H
Sun, GC
Donchev, V
Nghia, NX
Gandouzi, M
Zazoui, M
Bourgoin, JC
El-Abbassi, H
Rath, S
Date : 11 July 2002
DOI : 10.1016/S0168-9002(02)00953-1
Contributors :
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Instruments & Instrumentation, Nuclear Science & Technology, Physics, Particles & Fields, Spectroscopy, Physics, INSTRUMENTS & INSTRUMENTATION, NUCLEAR SCIENCE & TECHNOLOGY, PHYSICS, PARTICLES & FIELDS, SPECTROSCOPY, GaAs, epitxial layer, pin structure, X-ray detector, MECHANISM
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:55
Last Modified : 23 Jan 2020 18:12

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