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Photoreflectance characterization of reactive ion etched silicon

Murtagh, M, Beechinor, JT, Herbert, PAF, Kelly, PV, Crean, GM and Jeynes, C (1994) Photoreflectance characterization of reactive ion etched silicon Materials Research Society Symposium Proceedings, 324. pp. 167-173.

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Reactive ion etching (RIE) of p-type 2-3 Ωcm resistivity silicon (100) was characterized using Photoreflectance (PR), Rutherford Backscattering Spectrometry (RBS) and Spectroscopic Ellipsometry (SE). Isochronal (5 minutes) etching was performed at various DC etch biases (0-500 V) using a SiCl4 etch chemistry. The substrate etch rate dependence on applied bias was determined using mechanical profilometry. A distinct shift in the Λ3-Λ1 Si transition and significant spectral broadening of the room temperature PR spectra was observed as a function of etch bias. Photoreflectance results are correlated with RBS, SE and etch rate analysis. It is demonstrated that the PR spectra reflect a complex, competitive, plasma-surface interaction during the RIE process.

Item Type: Article
Divisions : Surrey research (other units)
Authors :
Murtagh, M
Beechinor, JT
Herbert, PAF
Kelly, PV
Crean, GM
Date : 1 January 1994
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:53
Last Modified : 24 Jan 2020 23:02

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