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Theory of threading edge and screw dislocations in GaN

Elsner, J, Jones, R, Sitch, PK, Porezag, VD, Elstner, M, Frauenheim, T, Heggie, MI, Öberg, S and Briddon, PR (1997) Theory of threading edge and screw dislocations in GaN Physical Review Letters, 79 (19). pp. 3672-3675.

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The atomic structures, electrical properties, and line energies for threading screw and threading edge dislocations of wurtzite GaN are calculated within the local-density approximation. Both dislocations are electrically inactive with a band gap free from deep levels. These results are understood to arise from relaxed core structures which are similar to (1010) surfaces.

Item Type: Article
Divisions : Surrey research (other units)
Authors :
Elsner, J
Jones, R
Sitch, PK
Porezag, VD
Elstner, M
Frauenheim, T
Öberg, S
Briddon, PR
Date : 10 November 1997
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:43
Last Modified : 24 Jan 2020 22:44

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