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Structural and electrical properties of threading dislocations in GaN

Elsner, J, Jones, R, Sitch, PK, Frauenheim, T, Heggie, MI, Öberg, S and Briddon, PR (1997) Structural and electrical properties of threading dislocations in GaN Materials Science Forum, 258-26 (PART 2). pp. 1203-1210.

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The atomic structures and electrical properties for threading screw and threading edge dislocations of wurtzite GaN are calculated within the local-density approximation. Both dislocations are electrically inactive with a band gap free from deep levels. These results are understood to arise from relaxed core structures which are similar to (1010) surfaces. The threading screw dislocations are found to be stable with an open-core whereas the threading edge dislocations possess filled cores.

Item Type: Article
Divisions : Surrey research (other units)
Authors :
Elsner, J
Jones, R
Sitch, PK
Frauenheim, T
Öberg, S
Briddon, PR
Date : 1 December 1997
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:43
Last Modified : 24 Jan 2020 22:44

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