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Deep acceptors trapped at threading-edge dislocations in GaN

Elsner, J, Jones, R, Heggie, MI, Sitch, PK, Haugk, M, Frauenheim, T, Öberg, S and Briddon, PR (1998) Deep acceptors trapped at threading-edge dislocations in GaN Physical Review B - Condensed Matter and Materials Physics, 58 (19). pp. 12571-12574.

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Local-density-functional methods are used to examine the behavior of the oxygen defect, gallium vacancy, and related defect complexes trapped at threading-edge dislocations in GaN. These defects are found to be particularly stable at the core of the dislocation where oxygen sits twofold coordinated in a bridge position. VGa-ON is found to be a deep double acceptor, VGa-(O,N)2 is a deep single acceptor, and VGa-(ON)3 at the dislocation core is electrically inactive. We suggest that the first two defects are responsible for a deep acceptor level associated with the midgap yellow luminescence band. © 1998 The American Physical Society.

Item Type: Article
Divisions : Surrey research (other units)
Authors :
Elsner, J
Jones, R
Sitch, PK
Haugk, M
Frauenheim, T
Öberg, S
Briddon, PR
Date : 1 December 1998
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:43
Last Modified : 24 Jan 2020 22:44

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