The formation of nanopipes caused by donor impurities in GaN: A theoretical study for the case of oxygen

Gutiérrez, R, Haugk, M, Frauenheim, T, Elsner, J, Jones, R, Heggie, MI, Öberg, S and Briddon, PR (1999) The formation of nanopipes caused by donor impurities in GaN: A theoretical study for the case of oxygen Philosophical Magazine Letters, 79 (2-3). pp. 147-152.

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Abstract

Local density-functional methods are used to examine the behaviour of O and O-related defect complexes at {1010}-type surfaces in GaN. We find that O has a tendency to segregate to the (1010) surface and we identify the gallium vacancy surrounded by three oxygen impurities (VGa-(ON)3) to be a particularly stable and electrically inert complex. We suggest that these complexes impede growth at the walls of the nanopipes preventing them from growing in. Also, other donor-related defect complexes, in particular gallium vacancies surrounded by three silicon atoms as second nearest neighbours, are expected to have the same effect.

Item Type:	Article
Divisions :	Surrey research (other units)
Authors :	Name Email ORCID Gutiérrez, R Haugk, M Frauenheim, T Elsner, J Jones, R Heggie, MI m.heggie@surrey.ac.uk Öberg, S Briddon, PR
Date :	1 March 1999
Depositing User :	Symplectic Elements
Date Deposited :	17 May 2017 12:43
Last Modified :	24 Jan 2020 22:44
URI:	http://epubs.surrey.ac.uk/id/eprint/836460

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