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Extended defects in GaN: A theoretical study

Elsner, J, Frauenheim, T, Haugk, M, Gutierrez, R, Jones, R and Heggie, MI (1999) Extended defects in GaN: A theoretical study MRS Internet Journal of Nitride Semiconductor Research, 4 (SUPPL.).

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We present density-functional theory studies for a variety of surfaces and extended defects in GaN. According to previous theoretical studies 1{10̄10} type surfaces are electrically inactive. They play an important role in GaN since similar configurations occur at open-core screw dislocations and nanopipes as well as at the core of threading edge dislocations. Domain boundaries are found to consist of four-fold coordinated atoms and are also found to be electrically inactive. Thus, except for full-core screw dislocations which possess heavily strained bonds all investigated extended defects do not induce deep states into the band-gap. However, electrically active impurities in particular gallium vacancies and oxygen related defect complexes are found to be trapped at the stress field of the extended defects.

Item Type: Article
Divisions : Surrey research (other units)
Authors :
Elsner, J
Frauenheim, T
Haugk, M
Gutierrez, R
Jones, R
Date : 1 December 1999
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:43
Last Modified : 24 Jan 2020 22:44

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