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Hydrogen interaction with dislocations in Si

Ewels, CP, Leoni, S, Heggie, MI, Jemmer, P, Hernandez, E, Jones, R and Briddon, PR (2000) Hydrogen interaction with dislocations in Si Phys Rev Lett, 84 (4). pp. 690-693.

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An H plasma has a remarkable effect on dislocation mobility in silicon, reducing its activation energy to 1.2 eV. Applying density functional theory to the interactions of H and H2 with the core of the 90 degrees partial dislocation in Si, we have identified a path for motion involving kink formation and migration at hydrogenated core bonds which conforms exactly to the experimentally measured activation energy.

Item Type: Article
Divisions : Surrey research (other units)
Authors :
Ewels, CP
Leoni, S
Jemmer, P
Hernandez, E
Jones, R
Briddon, PR
Date : 24 January 2000
DOI : 10.1103/PhysRevLett.84.690
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:42
Last Modified : 24 Jan 2020 22:42

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