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Calculations of energy barriers to CVD diamond growth

Latham, CD, Heggie, MI and Jones, R (1992) Calculations of energy barriers to CVD diamond growth In: Diamond Optics V, 1992-07-19 - ?, San Diego.

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The growth of thin diamond films by chemical vapor deposition currently in a painfully slow process with highly variable results depending on many experimental parameters. By computer modeling of processes at diamond surfaces using a local density functional cluster method, we have found substantial energy barriers (4 - 6 eV) to growth. Overall, the reactions are strongly exothermic though, thus making them irreversible. The results presented here focus on the addition of methyl radicals and acetylene molecules to {100} 2 X 1 reconstructed surfaces. We propose two possible diamond growth mechanisms in which the relatively weak reconstruction bonds have a crucial role.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Divisions : Surrey research (other units)
Authors :
Heggie, MI
Jones, R
Date : 20 December 1992
DOI : 10.1117/12.130768
Contributors :
Feldman, A
Holly, S
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:37
Last Modified : 23 Jan 2020 17:58

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