Degenerate electron gas effects in the modulation spectroscopy of pseudomorphic Al0.32Ga0.68As/In0.15Ga 0.85As/GaAs high electron mobility transistor structures

Dimoulas, A, Zekentes, K, Androulidaki, M, Kornelios, N, Michelakis, C and Hatzopoulos, Z (1993) Degenerate electron gas effects in the modulation spectroscopy of pseudomorphic Al0.32Ga0.68As/In0.15Ga 0.85As/GaAs high electron mobility transistor structures Applied Physics Letters, 63 (10). pp. 1417-1419.

Full text not available from this repository.

Abstract

The effects of a degenerate two-dimensional electron gas on the interband optical excitations, occurring in the active channel of Al0.32Ga 0.68As/In0.15Ga0.85As/GaAs high electron mobility transistor structures, were investigated by using phototransmittance spectroscopy. The ground state transition at room temperature exhibited a characteristic steplike line shape, which was considered to be an effect of the screening of excitons by the degenerate electron gas. A line shape fitting by using a first derivative of the absorption coefficient with respect to the electron sheet concentration ns, allowed an estimation of the latter quantity by phototransmittance. An observed temperature-sensitive excitonlike signal, associated with the second electron subband was attributed to the modulation of the many-body correlation-enhanced excitonic absorption, known as the Fermi-edge singularity.

Item Type:	Article
Divisions :	Surrey research (other units)
Authors :	Dimoulas, A, Zekentes, K, Androulidaki, M, Kornelios, N, Michelakis, C and Hatzopoulos, Z
Date :	1 December 1993
DOI :	10.1063/1.109695
Depositing User :	Symplectic Elements
Date Deposited :	17 May 2017 12:32
Last Modified :	24 Jan 2020 22:26
URI:	http://epubs.surrey.ac.uk/id/eprint/835724

Actions (login required)

View Item

Downloads