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Anomaly enhancement of the dislocation velocity in SiC

Savini, G, Savini, G, Marocchi, A, Suarez-Martinez, I, Haffenden, G, Heggie, MI and Öberg, S (2007) Anomaly enhancement of the dislocation velocity in SiC Physica B: Condensed Matter, 401-40. pp. 62-66.

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Under forward bias SiC p-i-n diodes exhibit an anomaly enhancement of the partial dislocation mobility. Through first-principle calculations, we have shown that Peierls barriers and electrical activities are strongly dependent on the dislocation core structures. Further we have found that solitons or antiphase defects along the dislocation line cannot explain alone the enhancement of the dislocation velocity. We have proposed a new theoretical model that can explain the enhancement of the dislocation mobility under forward bias. This model can be applied to any semiconductor materials in order to predict the behaviour under electron-hole plasma injections. © 2007 Elsevier B.V. All rights reserved.

Item Type: Article
Divisions : Surrey research (other units)
Authors :
Savini, G
Savini, G
Marocchi, A
Suarez-Martinez, I
Haffenden, G
Öberg, S
Date : 15 December 2007
DOI : 10.1016/j.physb.2007.08.114
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:31
Last Modified : 24 Jan 2020 22:23

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