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Planar InAs photodiodes fabricated using He ion implantation

Sandall, I, Tan, CH, Smith, A and Gwilliam, R (2012) Planar InAs photodiodes fabricated using He ion implantation Optics Express, 20 (8). pp. 8575-8583.

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We have performed Helium (He) ion implantation on InAs and performed post implant annealing to investigate the effect on the sheet resistance. Using the transmission line model (TLM) we have shown that the sheet resistance of a p InAs layer, with a nominal doping concentration of 1 × 10 cm , can increase by over 5 orders of magnitude upon implantation. We achieved a sheet resistance of 1 × 10 ω/Square in an 'asimplanted' sample and with subsequent annealing this can be further increased to 1 × 10 ω/Square. By also performing implantation on p-i-n structures we have shown that it is possible to produce planar photodiodes with comparable dark currents and quantum efficiencies to chemically etched reference mesa InAs photodiodes. © 2012 Optical Society of America.

Item Type: Article
Divisions : Surrey research (other units)
Authors :
Sandall, I
Tan, CH
Smith, A
Date : 9 April 2012
DOI : 10.1364/OE.20.008575
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:25
Last Modified : 24 Jan 2020 22:13

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