Stressed solid-phase epitaxial growth of ion-implanted amorphous silicon
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Rudawski, NG, Jones, KS and Gwilliam, R (2008) Stressed solid-phase epitaxial growth of ion-implanted amorphous silicon MATERIALS SCIENCE & ENGINEERING R-REPORTS, 61 (1-6). pp. 40-58.
Full text not available from this repository.| Item Type: | Article | ||||||||||||
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| Divisions : | Surrey research (other units) | ||||||||||||
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| Date : | 12 May 2008 | ||||||||||||
| DOI : | 10.1016/j.mser.2008.02.002 | ||||||||||||
| Uncontrolled Keywords : | Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Physics, Applied, Materials Science, Physics, MATERIALS SCIENCE, MULTIDISCIPLINARY, PHYSICS, APPLIED, silicon, amorphous, stress, strain, solid-phase epitaxial growth, ion-implantation, 2-DIMENSIONAL AMORPHIZED SI, POINT-DEFECT MECHANISMS, SINGLE-CRYSTAL SILICON, EDGE-INDUCED STRESS, FRACTURE-TOUGHNESS, ORIENTATION DEPENDENCE, CRYSTALLIZATION KINETICS, NONHYDROSTATIC STRESS, ELECTRON-MICROSCOPY, ACTIVATION VOLUME | ||||||||||||
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| Depositing User : | Symplectic Elements | ||||||||||||
| Date Deposited : | 17 May 2017 12:01 | ||||||||||||
| Last Modified : | 24 Jan 2020 21:36 | ||||||||||||
| URI: | http://epubs.surrey.ac.uk/id/eprint/833708 |
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