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Stressed solid-phase epitaxial growth of ion-implanted amorphous silicon

Rudawski, NG, Jones, KS and Gwilliam, R (2008) Stressed solid-phase epitaxial growth of ion-implanted amorphous silicon MATERIALS SCIENCE & ENGINEERING R-REPORTS, 61 (1-6). pp. 40-58.

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Item Type: Article
Divisions : Surrey research (other units)
Authors :
Rudawski, NG
Jones, KS
Date : 12 May 2008
DOI : 10.1016/j.mser.2008.02.002
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Physics, Applied, Materials Science, Physics, MATERIALS SCIENCE, MULTIDISCIPLINARY, PHYSICS, APPLIED, silicon, amorphous, stress, strain, solid-phase epitaxial growth, ion-implantation, 2-DIMENSIONAL AMORPHIZED SI, POINT-DEFECT MECHANISMS, SINGLE-CRYSTAL SILICON, EDGE-INDUCED STRESS, FRACTURE-TOUGHNESS, ORIENTATION DEPENDENCE, CRYSTALLIZATION KINETICS, NONHYDROSTATIC STRESS, ELECTRON-MICROSCOPY, ACTIVATION VOLUME
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:01
Last Modified : 24 Jan 2020 21:36

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