RELAXATION OF STRAINED INGAAS/GAAS LAYERS UNDER THERMAL-PROCESSING
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LOURENCO, MA, HOMEWOOD, KP and CONSIDINE, L (1994) RELAXATION OF STRAINED INGAAS/GAAS LAYERS UNDER THERMAL-PROCESSING In: 2nd International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC 94), 1994-05-18 - 1994-05-20, PARMA, ITALY.
Full text not available from this repository.| Item Type: | Conference or Workshop Item (UNSPECIFIED) | ||||||||||||
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| Divisions : | Surrey research (other units) | ||||||||||||
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| Date : | 1 December 1994 | ||||||||||||
| DOI : | 10.1016/0921-5107(94)90116-3 | ||||||||||||
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| Uncontrolled Keywords : | Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Physics, Condensed Matter, Materials Science, Physics, ANNEALING, DOUBLE-CRYSTAL X-RAY DIFFRACTION, INDIUM GALLIUM ARSENIDE, STRAINED LAYERS | ||||||||||||
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| Depositing User : | Symplectic Elements | ||||||||||||
| Date Deposited : | 17 May 2017 11:44 | ||||||||||||
| Last Modified : | 23 Jan 2020 17:13 | ||||||||||||
| URI: | http://epubs.surrey.ac.uk/id/eprint/832518 |
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