Comparison of the crystalline quality of step-graded and continuously graded InGaAs buffer layers
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Kidd, P, Dunstan, DJ, Colson, HG, Lourenco, MA, Sacedon, A, GonzalezSanz, F, Gonzalez, L, Gonzalez, Y, Garcia, R, Gonzalez, D , Pacheco, FJ and Goodhew, PJ (1996) Comparison of the crystalline quality of step-graded and continuously graded InGaAs buffer layers JOURNAL OF CRYSTAL GROWTH, 169 (4). pp. 649-659.
Full text not available from this repository.| Item Type: | Article | |||||||||||||||||||||||||||||||||||||||
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| Divisions : | Surrey research (other units) | |||||||||||||||||||||||||||||||||||||||
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| Date : | 1 December 1996 | |||||||||||||||||||||||||||||||||||||||
| DOI : | 10.1016/S0022-0248(96)00665-3 | |||||||||||||||||||||||||||||||||||||||
| Uncontrolled Keywords : | Science & Technology, Physical Sciences, Technology, Crystallography, Materials Science, Multidisciplinary, Physics, Applied, Materials Science, Physics, CRYSTALLOGRAPHY, MATERIALS SCIENCE, MULTIDISCIPLINARY, PHYSICS, APPLIED, STRAIN RELAXATION, PLASTIC RELAXATION, BEAM-EPITAXY, EPILAYERS, GROWTH, RELIEF, GAAS, DIFFRACTION, DESIGN | |||||||||||||||||||||||||||||||||||||||
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| Depositing User : | Symplectic Elements | |||||||||||||||||||||||||||||||||||||||
| Date Deposited : | 17 May 2017 11:44 | |||||||||||||||||||||||||||||||||||||||
| Last Modified : | 24 Jan 2020 21:10 | |||||||||||||||||||||||||||||||||||||||
| URI: | http://epubs.surrey.ac.uk/id/eprint/832515 |
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