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Deactivation of B and BF2 profiles after non-melt laser annealing

Sharp, JA, Cowern, NEB, Webb, RP, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA and Kirkby, KJ (2006) Deactivation of B and BF2 profiles after non-melt laser annealing Materials Research Society Symposium Proceedings, 912. pp. 159-163.

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Ultra-shallow B and BF 2 implants in silicon pre-amorphised with Ge have been activated using a scanning non-melt laser. The implants were activated either by using 1 or 10 laser scans. Isochronal 60s post-laser annealing between 700-1000°C were then undertaken to study the deactivation and reactivation of the B. Both B and BF2 samples were implanted with a dose of 1×10 15 B cm -2 at an effective energy of 500eV. The presence of F from the BF 2 implants, which is superimposed over the boron profile increases the sheet resistance of the initial fabricated junction (from 600-700 ohms/sq from B implants only to 750-1100 ohms/sq for BF2 implants). Fluorine also changes the deactivation and reactivation behaviour of the boron during the post-anneals by increasing the amount of deactivation of the boron. © 2006 Materials Research Society.

Item Type: Article
Divisions : Surrey research (other units)
Authors :
Sharp, JA
Cowern, NEB
Giubertoni, D
Gennaro, S
Bersani, M
Foad, MA
Date : 21 November 2006
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:41
Last Modified : 24 Jan 2020 21:07

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