Semiconducting amorphous FeSi2 layers synthesized by co-sputter deposition
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Milosavljevic, M, Shao, G, Gwilliam, RM, Gao, Y, Lourenco, MA, Valizadeh, R, Colligon, JS and Homewood, KP (2004) Semiconducting amorphous FeSi2 layers synthesized by co-sputter deposition In: 8th IUMRS International Conference on Advanced Materials (ICAM 2003), 2003 - ?, Yokohama, JAPAN.
Full text not available from this repository.| Item Type: | Conference or Workshop Item (UNSPECIFIED) | |||||||||||||||||||||||||||
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| Divisions : | Surrey research (other units) | |||||||||||||||||||||||||||
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| Date : | 2 August 2004 | |||||||||||||||||||||||||||
| DOI : | 10.1016/j.tsf.2004.02.067 | |||||||||||||||||||||||||||
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| Uncontrolled Keywords : | Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Materials Science, Coatings & Films, Physics, Applied, Physics, Condensed Matter, Materials Science, Physics, MATERIALS SCIENCE, COATINGS & FILMS, MATERIALS SCIENCE, MULTIDISCIPLINARY, PHYSICS, APPLIED, PHYSICS, CONDENSED MATTER, iron disilicide, amorphous phase, co-sputter deposition, ion implantation, LIGHT-EMITTING DIODE, OPTICAL-PROPERTIES, IRON DISILICIDE, PHASE-STABILITY, THIN-FILMS, SILICON, POLYCRYSTALLINE, TEMPERATURE, PREDICTION, ABSORPTION | |||||||||||||||||||||||||||
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| Depositing User : | Symplectic Elements | |||||||||||||||||||||||||||
| Date Deposited : | 17 May 2017 11:36 | |||||||||||||||||||||||||||
| Last Modified : | 23 Jan 2020 17:04 | |||||||||||||||||||||||||||
| URI: | http://epubs.surrey.ac.uk/id/eprint/832054 |
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