Cathodoluminescence studies of threading dislocations in InGaN/GaN as a function of electron irradiation dose
Tools
Tools
Tools
Henley, SJ and Cherns, D (2003) Cathodoluminescence studies of threading dislocations in InGaN/GaN as a function of electron irradiation dose JOURNAL OF APPLIED PHYSICS, 93 (7). pp. 3934-3939.
Full text not available from this repository.| Item Type: | Article | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|
| Divisions : | Surrey research (other units) | |||||||||
| Authors : |
|
|||||||||
| Date : | 1 April 2003 | |||||||||
| DOI : | 10.1063/1.1559417 | |||||||||
| Uncontrolled Keywords : | Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, LIGHT-EMITTING-DIODES, MULTIPLE-QUANTUM WELLS, SCREW DISLOCATIONS, V-DEFECTS, GAN, CENTERS, LAYERS, FIELDS, GAINN, EDGE | |||||||||
| Related URLs : | ||||||||||
| Depositing User : | Symplectic Elements | |||||||||
| Date Deposited : | 17 May 2017 11:32 | |||||||||
| Last Modified : | 24 Jan 2020 20:58 | |||||||||
| URI: | http://epubs.surrey.ac.uk/id/eprint/831773 |
Actions (login required)
 |
View Item |
Downloads
Downloads per month over past year