GROWTH AND CHARACTERIZATION OF RELAXED EPILAYERS OF INGAAS ON GAAS
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DUNSTAN, DJ, DIXON, RH, KIDD, P, HOWARD, LK, WILKINSON, VA, LAMBKIN, JD, JEYNES, C, HALSALL, MP, LANCEFIELD, D, EMENY, MT , GOODHEW, PJ, HOMEWOOD, KP, SEALY, BJ and ADAMS, AR (1993) GROWTH AND CHARACTERIZATION OF RELAXED EPILAYERS OF INGAAS ON GAAS JOURNAL OF CRYSTAL GROWTH, 126 (4). pp. 589-600.
Full text not available from this repository.| Item Type: | Article | |||||||||||||||||||||||||||||||||||||||||||||
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| Divisions : | Surrey research (other units) | |||||||||||||||||||||||||||||||||||||||||||||
| Authors : |
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| Date : | 1 February 1993 | |||||||||||||||||||||||||||||||||||||||||||||
| DOI : | 10.1016/0022-0248(93)90808-A | |||||||||||||||||||||||||||||||||||||||||||||
| Uncontrolled Keywords : | Science & Technology, Physical Sciences, Technology, Crystallography, Materials Science, Multidisciplinary, Physics, Applied, Materials Science, Physics, CRYSTALLOGRAPHY, MATERIALS SCIENCE, MULTIDISCIPLINARY, PHYSICS, APPLIED, QUANTUM-WELLS, MISFIT DISLOCATIONS, CRITICAL THICKNESS, LAYER, RELAXATION, STRAIN | |||||||||||||||||||||||||||||||||||||||||||||
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| Depositing User : | Symplectic Elements | |||||||||||||||||||||||||||||||||||||||||||||
| Date Deposited : | 17 May 2017 11:32 | |||||||||||||||||||||||||||||||||||||||||||||
| Last Modified : | 24 Jan 2020 20:57 | |||||||||||||||||||||||||||||||||||||||||||||
| URI: | http://epubs.surrey.ac.uk/id/eprint/831739 |
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