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Frequency noise level of as ion implanted TiN-Ti-Si structures

Stojanovic, M, Jeynes, C, Bibic, N, Milosavljevic, M, Vasic, A and Milosevic, Z (1996) Frequency noise level of as ion implanted TiN-Ti-Si structures In: 16th International Conference on Atomic Collisions in Solids (ICACS-16), 1995-07-17 - 1995-07-21, LINZ, AUSTRIA.

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Divisions : Surrey research (other units)
Authors :
Stojanovic, M
Bibic, N
Milosavljevic, M
Vasic, A
Milosevic, Z
Date : 1 July 1996
DOI : 10.1016/0168-583X(95)01533-7
Contributors :
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Instruments & Instrumentation, Nuclear Science & Technology, Physics, Atomic, Molecular & Chemical, Physics, Nuclear, Physics, INSTRUMENTS & INSTRUMENTATION, NUCLEAR SCIENCE & TECHNOLOGY, PHYSICS, ATOMIC, MOLECULAR & CHEMICAL, PHYSICS, NUCLEAR, SILICIDES, CONTACTS, SILICON
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:32
Last Modified : 23 Jan 2020 16:57

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