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The bonding of C-As acceptors in InxGa1-xAs grown by chemical beam epitaxy using carbon tetrabromide as the source of carbon

Ashwin, MJ, Pritchard, RE, Newman, RC, Joyce, TB, Bullough, TJ, Wagner, J, Jeynes, C, Breuer, SJ, Jones, R, Briddon, PR and Oberg, S (1996) The bonding of C-As acceptors in InxGa1-xAs grown by chemical beam epitaxy using carbon tetrabromide as the source of carbon JOURNAL OF APPLIED PHYSICS, 80 (12). pp. 6754-6760.

Full text not available from this repository.
Item Type: Article
Divisions : Surrey research (other units)
Authors :
NameEmailORCID
Ashwin, MJ
Pritchard, RE
Newman, RC
Joyce, TB
Bullough, TJ
Wagner, J
Jeynes, Cc.jeynes@surrey.ac.uk
Breuer, SJ
Jones, R
Briddon, PR
Oberg, S
Date : 15 December 1996
DOI : 10.1063/1.363803
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, P-TYPE GAAS, HYDROGEN COMPLEXES, INGAAS, TRIMETHYLGALLIUM, DECOMPOSITION, MOMBE
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:31
Last Modified : 24 Jan 2020 20:57
URI: http://epubs.surrey.ac.uk/id/eprint/831723

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