The bonding of C-As acceptors in InxGa1-xAs grown by chemical beam epitaxy using carbon tetrabromide as the source of carbon
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Ashwin, MJ, Pritchard, RE, Newman, RC, Joyce, TB, Bullough, TJ, Wagner, J, Jeynes, C, Breuer, SJ, Jones, R, Briddon, PR and Oberg, S (1996) The bonding of C-As acceptors in InxGa1-xAs grown by chemical beam epitaxy using carbon tetrabromide as the source of carbon JOURNAL OF APPLIED PHYSICS, 80 (12). pp. 6754-6760.
Full text not available from this repository.| Item Type: | Article | ||||||||||||||||||||||||||||||||||||
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| Divisions : | Surrey research (other units) | ||||||||||||||||||||||||||||||||||||
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| Date : | 15 December 1996 | ||||||||||||||||||||||||||||||||||||
| DOI : | 10.1063/1.363803 | ||||||||||||||||||||||||||||||||||||
| Uncontrolled Keywords : | Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, P-TYPE GAAS, HYDROGEN COMPLEXES, INGAAS, TRIMETHYLGALLIUM, DECOMPOSITION, MOMBE | ||||||||||||||||||||||||||||||||||||
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| Depositing User : | Symplectic Elements | ||||||||||||||||||||||||||||||||||||
| Date Deposited : | 17 May 2017 11:31 | ||||||||||||||||||||||||||||||||||||
| Last Modified : | 24 Jan 2020 20:57 | ||||||||||||||||||||||||||||||||||||
| URI: | http://epubs.surrey.ac.uk/id/eprint/831723 |
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