Accurate RBS measurement of ion implant doses in a silicon
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Boudreault, G, Jeynes, C, Wendler, E, Nejim, A, Webb, RP and Watjen, U (2002) Accurate RBS measurement of ion implant doses in a silicon SURFACE AND INTERFACE ANALYSIS, 33 (6). pp. 478-486.
Full text not available from this repository.| Item Type: | Article | |||||||||||||||||||||
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| Divisions : | Surrey research (other units) | |||||||||||||||||||||
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| Date : | 1 June 2002 | |||||||||||||||||||||
| DOI : | 10.1002/sia.1235 | |||||||||||||||||||||
| Uncontrolled Keywords : | Science & Technology, Physical Sciences, Chemistry, Physical, Chemistry, CHEMISTRY, PHYSICAL, Rutherford backscattering spectrometry, ion implantation, dosimetry, standards, silicon energy loss, SURFACE-ANALYSIS, ENERGY-LOSS, SI, BACKSCATTERING, CALIBRATION, SIMULATION, HE-4 | |||||||||||||||||||||
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| Depositing User : | Symplectic Elements | |||||||||||||||||||||
| Date Deposited : | 17 May 2017 11:31 | |||||||||||||||||||||
| Last Modified : | 24 Jan 2020 20:56 | |||||||||||||||||||||
| URI: | http://epubs.surrey.ac.uk/id/eprint/831660 |
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