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Electrical profiles of 20 nm junctions in Sb implanted silicon

Alzanki, T, Gwilliam, R, Emerson, N, Smith, A, Webb, R and Sealy, BJ (2006) Electrical profiles of 20 nm junctions in Sb implanted silicon In: 14th International Conference on Ion Beam Modification of Materials (IBMM 2004), 2004-09-05 - 2004-09-10, Pacific Grove, CA.

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Divisions : Surrey research (other units)
Authors :
Alzanki, T
Emerson, N
Smith, A
Sealy, BJ
Date : 1 January 2006
DOI : 10.1016/j.nimb.2005.08.091
Contributors :
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Instruments & Instrumentation, Nuclear Science & Technology, Physics, Atomic, Molecular & Chemical, Physics, Nuclear, Physics, INSTRUMENTS & INSTRUMENTATION, NUCLEAR SCIENCE & TECHNOLOGY, PHYSICS, ATOMIC, MOLECULAR & CHEMICAL, PHYSICS, NUCLEAR, silicon, shallow junctions, antimony implants, electrical profiles
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:26
Last Modified : 23 Jan 2020 16:52

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