Electrical profiles of 20 nm junctions in Sb implanted silicon
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Alzanki, T, Gwilliam, R, Emerson, N, Smith, A, Webb, R and Sealy, BJ (2006) Electrical profiles of 20 nm junctions in Sb implanted silicon In: 14th International Conference on Ion Beam Modification of Materials (IBMM 2004), 2004-09-05 - 2004-09-10, Pacific Grove, CA.
Full text not available from this repository.| Item Type: | Conference or Workshop Item (UNSPECIFIED) | |||||||||||||||||||||
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| Divisions : | Surrey research (other units) | |||||||||||||||||||||
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| Date : | 1 January 2006 | |||||||||||||||||||||
| DOI : | 10.1016/j.nimb.2005.08.091 | |||||||||||||||||||||
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| Uncontrolled Keywords : | Science & Technology, Technology, Physical Sciences, Instruments & Instrumentation, Nuclear Science & Technology, Physics, Atomic, Molecular & Chemical, Physics, Nuclear, Physics, INSTRUMENTS & INSTRUMENTATION, NUCLEAR SCIENCE & TECHNOLOGY, PHYSICS, ATOMIC, MOLECULAR & CHEMICAL, PHYSICS, NUCLEAR, silicon, shallow junctions, antimony implants, electrical profiles | |||||||||||||||||||||
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| Depositing User : | Symplectic Elements | |||||||||||||||||||||
| Date Deposited : | 17 May 2017 11:26 | |||||||||||||||||||||
| Last Modified : | 23 Jan 2020 16:52 | |||||||||||||||||||||
| URI: | http://epubs.surrey.ac.uk/id/eprint/831389 |
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