Effect of B dose and Ge prearnorphization energy on the electrical and structural properties of ultrashallow junctions in silicon-on-insulator

Hamilton, JJ, Collart, EJH, Colombeau, B, Bersani, M, Giubertoni, D, Kah, M, Cowern, NEB and Kirkby, KJ (2006) Effect of B dose and Ge prearnorphization energy on the electrical and structural properties of ultrashallow junctions in silicon-on-insulator In: Symposium on Sub Second Rapid Thermal Processing for Device Fabrication held at the 2006 MRS Spring Meeting, 2006-04-18 - 2006-04-19, San Francisco, CA.

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Item Type:	Conference or Workshop Item (UNSPECIFIED)
Divisions :	Surrey research (other units)
Authors :	Name Email ORCID Hamilton, JJ Collart, EJH Colombeau, B Bersani, M Giubertoni, D Kah, M Cowern, NEB Kirkby, KJ k.kirkby@surrey.ac.uk
Date :	1 January 2006
Contributors :	Contribution Name Email ORCID Pawlak, BJ Jones, KS Felch, SB Hane, M publisher MATERIALS RESEARCH SOCIETY,
Uncontrolled Keywords :	Science & Technology, Technology, Materials Science, Multidisciplinary, Materials Science, Characterization & Testing, Materials Science
Related URLs :	Author
Depositing User :	Symplectic Elements
Date Deposited :	17 May 2017 11:26
Last Modified :	23 Jan 2020 16:51
URI:	http://epubs.surrey.ac.uk/id/eprint/831360

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