Teo, EJ, Yang, P, Xiong, BQ, Breese, MBH, Mashanovich, GZ, Ow, YS, Reed, GT and Bettiol, AA
(2010)
Novel types of silicon waveguides fabricated using proton beam irradiation
In: Silicon Photonics V, 2010-01-24 - 2010-01-27, San Francisco, USA.
Full text not available from this repository.
Abstract
In this work, we describe the use of a combination of proton beam irradiation and electrochemical etching to fabricate high index-contrast waveguides directly in silicon without the need for silicon-on-insulator substrate. Various types of waveguides with air or porous silicon cladding have been demonstrated. We show that porous silicon (PS) is a flexible cladding material due to the tunability of its refractive index and thickness. The Si/PS waveguide system also possesses better transmittance in the ranges of 1.2-9 and 23-200 μm, compared to Si/SiO2 waveguides. This is potentially important for mid and far-IR applications. Since it is compatible with conventional CMOS technology, this process can be used for fabrication of integrated optoelectronics circuits.
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