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Vacancy engineering for ultra-shallow junction formation

Gwilliam, R, Cowern, NEB, Colombeau, B, Sealy, B and Smith, AJ (2007) Vacancy engineering for ultra-shallow junction formation NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 261 (1-2). pp. 600-603.

Full text not available from this repository.
Item Type: Article
Divisions : Surrey research (other units)
Authors :
Cowern, NEB
Colombeau, B
Sealy, B
Date : 1 August 2007
DOI : 10.1016/j.nimb.2007.04.048
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Instruments & Instrumentation, Nuclear Science & Technology, Physics, Atomic, Molecular & Chemical, Physics, Nuclear, Physics, INSTRUMENTS & INSTRUMENTATION, NUCLEAR SCIENCE & TECHNOLOGY, PHYSICS, ATOMIC, MOLECULAR & CHEMICAL, PHYSICS, NUCLEAR, vacancy engineering, boron doping, SOI, solid solubility, BORON-INTERSTITIAL CLUSTERS, TRANSIENT ENHANCED DIFFUSION, SILICON, IMPLANTS, SI
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:13
Last Modified : 24 Jan 2020 20:31

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